Abstract: The high-temperature annealing process of high permeability grain-oriented silicon steel with AlN as an inhibitor was studied by interrupting test. The evolution of Goss texture in this process was analyzed by electron back-scattered diffraction. It is found that the Goss grain size first decreases and then increases with the rise of temperature. Goss texture appears in the orientation distribution function at 800℃, but the intensity is very weak and the deviation angle is more than 10o. The average growth rate of Goss grains is faster than other grains at 900℃. Goss grains grow abnormally from 950 to 1000℃, and the deviation angle ranges from 3o to 6o. Before 1000℃, in comparison with other grains, Goss grains have no size advantage.