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基質摻雜離子對(Y,Rn)2O2S∶Sm3+,Ti4+,Mg2+(Rn=La,Gd,Lu,Ga,Al)紅色長余輝材料余輝性能的影響

Effect of host-doping ions on the afterglow property of (Y,Rn)2O2S: Sm3+,Ti4+,Mg2+(Rn=La,Gd,Lu,Ga,Al) red phosphors

  • 摘要: 采用高溫固相法制備了基質摻雜的(Y,Rn)2O2S:Sm3+,Ti4+,Mg2+(Rn=La,Gd,Lu,Ga,Al)紅色長余輝材料,主峰均為4G5/26H7/2躍遷的紅橙色光發射,不受基質摻雜的影響.余輝性能測試表明摻雜離子半徑對余輝性能具有重要的影響:單摻時,與Y3+半徑相近并略小時樣品的余輝時間有正增長;雙離子共摻時均為小半徑的摻雜對余輝性能有顯著的提高,其中之一半徑較大時即具有負效應.并對可能存在的機理進行了初步探討.

     

    Abstract: Host doped (Y,Rn)2O2S:Sm3+,Ti4+,Mg2+ (Rn=La, Gd, Lu, Ga, Al) red phosphors were prepared by solid state method. Their chief emission peaks are in the red-orange range coming from the energy transition of 4G5/26H7/2 and host-doping has little effluence on the emitting spectra. Afterglow results show that the semi diameter of doped ions has some effect on the longlasting property. When the doped ion is a little smaller than Y3+, the afterglow time will increase. When two ions are doped, two smaller ions doping will promote the long-lasting property; if one ion is larger than Y3+, it will shorten the long-lasting time. The presumable mechanism was also discussed.

     

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