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原位合成MoSi2/SiC復合材料的組織缺陷

Microstructure Defects of MoSi2-SiC Composite Synthesized in Situ

  • 摘要: TEM和HREM研究表明,原位合成MoSi2基復合材料的組織中,基體MoSi2中存在較多的位錯,而且尤以MoSi2與SiC的界面處位錯最為集中,SiC顆粒的內部缺陷的主要形式為孿晶和層錯.納米力學探針分析表明,MoSi2/SiC界面附近存在明顯的硬度梯度,在材料制備冷卻過程中,因MoSi2基體與SiC顆粒之間的熱膨脹系數(CTE)的差別而導致的其中的殘余熱應力是造成上述組織特征的原因.

     

    Abstract: TEM and HREM observations of the MoSi2-SiC composite synthesised in situ reveal that large amounts of dislocations exist in the MoSi2 matrix specially near the interfaces between MoSi2 math and the SiC particles, and the SiC particles typically contain defects including twins and stacking faults. Nanoindentation investigation shows that there exists a gradient distribution of microhardness near the interface of MoSi2/SiC. The microstructurd characters above can be attributed to the residue heat stress due to the CTE discrepancy between MoSi2/SiC generated in the cooling process of the production.

     

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