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氫化非晶態硅薄膜的滲氫內耗實驗研究

Experimental Study of Internal Friction of a-Si:H Films Charged with Hydrogen

  • 摘要: 用簧片振動法研究了GDa-Si:H薄膜氣氛滲氫后的內耗.當測量頻率為47.5Hz時,在-46℃處觀察到氫致內耗峰,其激活能為0.30±0.05eV,弛豫時間因子為3.52×10-9 s.

     

    Abstract: The internal friction of GD a-Si:H films charged with hydrogen in hydrogen atmosphere were measured by reed vibrating method. As a result, hydrogen related peak appears at 47.5Hz and -46℃ with activation energy (0.30 ±0.05)eV and relaxation time 3.52×10-9 s. Further research is needed to make the nature clear.

     

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