Morphology of silicon in corundum silicon-nitride composites after nitridation

TU Junbo; SUN Jialin; HONG Yanruo

doi:10.13374/j.issn1001-053x.2005.03.015

Volume 27 Issue 3

Aug. 2021

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TU Junbo, SUN Jialin, HONG Yanruo. Morphology of silicon in corundum silicon-nitride composites after nitridation[J]. Chinese Journal of Engineering, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

Citation:

TU Junbo, SUN Jialin, HONG Yanruo. Morphology of silicon in corundum silicon-nitride composites after nitridation[J]. Chinese Journal of Engineering, 2005, 27(3): 317-320. doi: 10.13374/j.issn1001-053x.2005.03.015

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Morphology of silicon in corundum silicon-nitride composites after nitridation

doi: 10.13374/j.issn1001-053x.2005.03.015

1. Materials Science and Engineering School, University of Science and Technology Beijing, Beijing 100083, China;
2. College of Materials, Hebei Polytechnic University, Tangshan 063009, China

Received Date: 2004-04-30
Rev Recd Date: 2004-09-20

Available Online: 2021-08-17

Abstract

Abstract

The morphology of silicon was studied in corundum silicon-nitride composites after nitridation at different temperatures. The results showed that silicon was wrapped by flocculant O'-Sialon at 1300℃. Silicon grains were broken and silicon nitride formed inside the grains at 1400℃. All silicon was nitrided into O'-Sialon or silicon nitride without any silicon left at 1500℃. Impurities from silicon such as CaO, Fe₂O₃ were aggregated at 1600℃.
- silicon,
- corundum-silicon nitride,
- nitridation,
- morphology