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SnO2基鈣鈦礦太陽能電池界面調控與性能優化

汪志鵬 李瑞 張梅 郭敏

汪志鵬, 李瑞, 張梅, 郭敏. SnO2基鈣鈦礦太陽能電池界面調控與性能優化[J]. 工程科學學報, 2023, 45(2): 263-277. doi: 10.13374/j.issn2095-9389.2021.08.13.004
引用本文: 汪志鵬, 李瑞, 張梅, 郭敏. SnO2基鈣鈦礦太陽能電池界面調控與性能優化[J]. 工程科學學報, 2023, 45(2): 263-277. doi: 10.13374/j.issn2095-9389.2021.08.13.004
WANG Zhi-peng, LI Rui, ZHANG Mei, GUO Min. Interface modification and performance optimization of SnO2 based perovskite solar cells[J]. Chinese Journal of Engineering, 2023, 45(2): 263-277. doi: 10.13374/j.issn2095-9389.2021.08.13.004
Citation: WANG Zhi-peng, LI Rui, ZHANG Mei, GUO Min. Interface modification and performance optimization of SnO2 based perovskite solar cells[J]. Chinese Journal of Engineering, 2023, 45(2): 263-277. doi: 10.13374/j.issn2095-9389.2021.08.13.004

SnO2基鈣鈦礦太陽能電池界面調控與性能優化

doi: 10.13374/j.issn2095-9389.2021.08.13.004
基金項目: 國家自然科學基金資助項目(51572020, 51772023)
詳細信息
    通訊作者:

    E-mail: guomin@ustb.edu.cn

  • 中圖分類號: O472

Interface modification and performance optimization of SnO2 based perovskite solar cells

More Information
  • 摘要: 近十余年來,鈣鈦礦太陽能電池光電轉換效率從3.8%提升至目前的25.5%,有望成為下一代商業用薄膜太陽能電池。然而,目前廣泛使用的TiO2電子傳輸層電子遷移率低、退火溫度高、紫外光照穩定性差等特性使得TiO2基鈣鈦礦太陽能電池性能,尤其是長期穩定性,面臨巨大挑戰。SnO2由于良好的電子遷移率、適宜的能帶結構、簡單的低溫溶液合成以及穩定的化學結構等優點成為替代TiO2電子傳輸層的首選。目前,調控SnO2/鈣鈦礦以及鈣鈦礦/空穴傳輸層界面是SnO2基鈣鈦礦太陽能電池性能優化的關鍵。鑒于此,在詳細介紹SnO2電子傳輸層本體與表面,鈣鈦礦本體、晶界及表面缺陷類型及特征的基礎之上,重點總結了SnO2/鈣鈦礦、鈣鈦礦/空穴傳輸層界面調控及性能提升的研究進展。最后,針對SnO2基鈣鈦礦太陽能電池器件界面調控與性能優化的研究趨勢和發展方向做出展望。

     

  • 圖  1  常見的電子傳輸材料的晶體結構與能帶圖. (a) SnO2晶體結構;(b) 常見電子傳輸層LUMO與HOMO能級(相對于真空能級Evac)。

    Figure  1.  Crystal structures and band diagrams of common electron transport materials: (a) SnO2 crystal structure;(b) LUMO and HOMO energy levels of the electron transport layers (vs Evac)

    圖  2  SnO2電子傳輸層常見的缺陷鈍化及界面調控示意圖(紫外臭氧處理、退火、摻雜、缺陷鈍化等)

    Figure  2.  Schematic diagram of common defect passivation and interface modification of the SnO2 electron transport layer (UV ozone treatment, annealing, doping, defect passivation, etc.)

    圖  3  (NH4)2S鈍化SnO2電子傳輸層缺陷. (a) SnO2缺陷鈍化后FTIR測試結果[57];(b) SnO2缺陷鈍化原理圖[57];(c) 甘氨酸鈍化SnO2缺陷的原理圖[53];(d) 3-(1-吡啶基)-1-丙烷磺酸鹽鈍化SnO2缺陷的原理圖[61].

    Figure  3.  SnO2 electron transport layer defects passivated by (NH4)2S: (a) SnO2 FTIR test results after defect passivation[57]; (b) SnO2 defect passivation principle diagram[57]; (c)principle diagram SnO2 defect passivated by glycine [53];(d) passivation mechanism diagram SnO2 defects passivated by 3-(1-pyridyl)-1-propane sulfonate [61]

    圖  6  鈣鈦礦缺陷鈍化原理圖. (a) 4-咪唑乙酸鹽酸鹽鈍化鈣鈦礦缺陷的原理圖[67];(b) PbI2鈍化鈣鈦礦晶界[83]

    Figure  6.  Schematic diagram of perovskite defect passivation: (a) schematic diagram of perovskite defects passivated by 4-imidazoleacetic acid hydrochloride [67]; (b) perovskite grain boundaries passivated by PbI2 [83]

    圖  4  鈣鈦礦常見的缺陷示意圖. (a) 鈣鈦礦完美晶體; (b) MA+空位; (c) I?空位; (d) Pb2+間隙; (e) I3-間隙; (f) Pb—I反占位; (g) Pb2+空位; (h) 晶界; (i) 表面懸掛鍵

    Figure  4.  Schematic diagram of common defects in perovskite: (a) perfect perovskite crystal; (b) MA+ vacancy; (c) I? vacancy; (d) Pb2+ interstitial; (e) I3- interstitial; (f) Pb—I antisite; (g) Pb2+ vacancy; (h) grain boundary; (i) surface dangling bond

    圖  5  SnO2基鈣鈦礦太陽能電池中鈣鈦礦常見的缺陷鈍化方法示意圖

    Figure  5.  Schematic diagram of common defect passivation methods in SnO2-based perovskite solar cells

    表  1  不同制備方法對SnO2晶體結構、帶隙(Eg)、電子遷移率(μ)、缺陷態密度(Nt)的影響

    Table  1.   Influence of preparation methods on SnO2 crystal structure, bandgap (Eg), electron mobility (μ), defect state density (Nt)

    Preparation methodCrystal structureEg/eVμ /(cm2·V?1·s?1)Electrical conductivity/(S·cm?1)Nt /cm?3Reference
    Sol-gelRutile9.92×10?41.93×1016[43]
    CBDRutile3.922.4×10?32.17×1015[35]
    ALDAmorphous3.682.44×10?62.09×10?4[36]
    Dual-source combustionRutile4.033.2×10?6[40]
    ElectrodepositionRutile3.676.0x10?8[42]
    下載: 導出CSV

    表  2  鈍化層鈍化SnO2表面缺陷研究進展的總結:鈍化方式、鈍化物質/濃度、鈍化官能團、器件結構、有(W)無(WO)鈍化情況下器件性能參數

    Table  2.   Summary of research progress on SnO2 surface defects passivated by the passivation layer: passivation materials, concentration, functional groups of the passivation material, device structure, device performance parameters with (W) without (WO) passivation.

    Passivation materialsDevice structurePCE(WO/W)/%Reference
    Choline ChlorideGlass/ITO/Chol-SnO2/MAPbI3/Spiro-OMeTAD/Au16.83/18.90[12]
    NPC60-OHGlass/ITO/SnO2/ NPC60-OH)/(FAMA)PbI3/Spiro-OMeTAD/Ag19.04/20.39[62]
    DopamineGlass/ITO/SnO2/DA/MAPbI3/Spiro-OMeTAD/Au14.05/16.87[65]
    CH3COOHGlass/ITO/SnO2/(CsFAMA)Pb(BrI)3 /Spiro-OMeTAD/Au18.84/20.56[52]
    Graphene quantum dotsGlass/ITO/SnO2/GQDs/(FAMA)PbIxCl3-x/Spiro-OMeTAD/Ag18.6/21.1[69]
    NH2CHCOOHGlass/ITO/SnO2/Glycine/Cs0.05FA0.95-yMAyPbI1-xClx/Spiro-OMeTAD/Ag18.82/20.63[53]
    KOHGlass/ITO/SnO2/KOH/CsPbI2Br/carbon8.59/10.7[64]
    Graphene quantum dotsGlass/FTO/GQDs:SnO2/MAPbI3/Spiro-OMeTAD/Au13.61/16.54[66]
    Carbon quantum dotsGlass/FTO/SnO2/GQDs/SnO2/MAPbI3/Spiro-OMeTAD/Ag17.46/20.78[70]
    Fulleropyrrolidine(NMBF-Cl)Glass/ITO/SnO2/NMBF-Cl dimer/(FAPbI3)x(MAPbBr3)1?x/Spiro-OMeTAD/Ag20.5/21.6[71]
    4-imidazoleacetic acid hydrochloride(ImAcHCl)Glass/FTO/SnO2/(FAPbI3)0.95(MAPbBr3)0.05/Spiro-MeOTAD/Au19.53/20.96[67]
    NH4FGlass /ITO/SnO2/(FAPbI3)0.95(MAPbBr3)0.05/spiro-OMeTAD/Au22.4/23.2[63]
    potassium O-hexyl xanthateGlass/ITO/SnO2/MAPbI3/Spiro-OMeTAD/Au16.56/18.41[72]
    3-(1-pyridinio)-1-propanesulfonateGlass/FTO/SnO2/(CsFAMA)Pb(BrI)3/Spiro-OMeTAD/Ag19.63/21.43[61]
    CsAcGlass/FTO/SnO2/(FAPbI3)0.85(MAPbBr3)0.15/Spiro-OMeTAD/Au.18.06/19.23[73]
    C60 pyrrolidine tris-acid(CPTA)PEN/ITO/SnO2/CPTA/MAPbI3/Spiro-OMeTAD/Au15.35/18.36[74]
    下載: 導出CSV

    表  3  SnO2基鈣鈦礦太陽能電池中鈣鈦礦層缺陷鈍化及Perovskite/HTL界面調控的研究進展總結:鈍化類型、鈍化劑、器件結構、有(W)無(WO)鈍化情況下器件效率

    Table  3.   Summary of research progress on defect passivation of the perovskite layer and Perovskite/HTL interface regulation in SnO2-based perovskite solar cells: passivation type, passivating agent, device structure, PCE with (W) without (WO) passivation

    Passivation typePassivating agentDevice structurePCE(WO/W)/%Reference
    Bulk defect passivationEDACl2Glass/ITO/SnO2/ (EDACl2)/ (Cs0.15FA0.85PbI2.7Br0.3)/Carbon15.60/18.80[81]
    Potassium-intercalated rubrene (K2Rubrene)Glass/ITO/SnO2 QD/(FAMA)Pb(IBr)3/Spiro-OMeTAD/Au17.82/18.14[80]
    PEAIGlass/ITO/SnO2/FA1?xMAxPbI3/Spiro-OMeTAD/Au20.95/23.53[3]
    Pb(SCN)2Glass/ITO/SnO2/FA0.4MA0.6PbI2.8-xBr0.2(SCN)x/Spiro-OMeTAD/Ag17.13/19.64[13]
    Grain boundary defect passivationPbI2Glass/ITO/SnO2/(FAPbI3)1-x(MAPbBr3)x/Spiro-OMeTAD/Au17.61/19.55[82]
    M13 bacteriophageGlass/ITO/SnO2/MAPbI3(M13)/Spiro-OMeTAD/Au17.1/19.7[84]
    NAMIGlass/FTO/SnO2/Cs0.05(MA0.15FA0.85)0.95Pb(I0.85Br0.15)3/(NMA)2PbI4/Spiro-OMeTAD/Au18.75/20.41[85]
    PMAIGlass/ITO/SnO2/FA1–xMAxPMAyPbI3/Spiro-OMeTAD/Au20.93/23.32[86]
    Surface defect passivationMASCN、FASCNGlass/FTO/SnO2/ FAPbI3/Spiro-OMeTAD/Au?/23.1[88]
    PAIGlass/ITO/SnO2/ (CsFAMA)PbI3/Spiro-OMeTAD/Au16.85/20.53[89]
    BAIGlass/FTO/SnO2/PCBM/BA0.05(FA0.83Cs0.17)0.91Pb(I0.8Br0.2)3/Spiro-OMeTAD/Au16.9/20.6[87]
    下載: 導出CSV
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  • 收稿日期:  2021-08-13
  • 網絡出版日期:  2021-11-11
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